Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition: Fid-Bau Portal

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

Park, N. K. / Kang, D. K. / Kim, B. H. / Jo, S. J. / Ha, J. S.

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Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

Park, N. K. / Kang, D. K. / Kim, B. H. / Jo, S. J. / Ha, J. S.

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

Park, N. K. / Kang, D. K. / Kim, B. H. / Jo, S. J. / Ha, J. S.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

Contributors:

Park, N. K. (author) / Kang, D. K. (author) / Kim, B. H. (author) / Jo, S. J. (author) / Ha, J. S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 8506-8509

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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