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    Structural and interfacial properties of high-k HfOxNy gate dielectric films

    New search for: He, G.
    New search for: Fang, Q.
    New search for: Zhang, L. D.

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    Structural and interfacial properties of high-k HfOxNy gate dielectric films

    New search for: He, G.
    New search for: Fang, Q.
    New search for: Zhang, L. D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Structural and interfacial properties of high-k HfOxNy gate dielectric films

    New search for: He, G.
    New search for: Fang, Q.
    New search for: Zhang, L. D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Structural and interfacial properties of high-k HfOxNy gate dielectric films

    Contributors:

    He, G. (author) / Fang, Q. (author) / Zhang, L. D. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 870-875

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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