HfO2 as gate dielectric on Ge: Interfaces and deposition techniques: Fid-Bau Portal

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Caymax, M. / Van Elshocht, S. / Houssa, M. / Delabie, A. / Conard, T. / Meuris, M. / Heyns, M. M. / Dimoulas, A. / Spiga, S. / Fanciulli, M.

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HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Caymax, M. / Van Elshocht, S. / Houssa, M. / Delabie, A. / Conard, T. / Meuris, M. / Heyns, M. M. / Dimoulas, A. / Spiga, S. / Fanciulli, M.

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Caymax, M. / Van Elshocht, S. / Houssa, M. / Delabie, A. / Conard, T. / Meuris, M. / Heyns, M. M. / Dimoulas, A. / Spiga, S. / Fanciulli, M.

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Title:

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Contributors:

Caymax, M. (author) / Van Elshocht, S. (author) / Houssa, M. (author) / Delabie, A. (author) / Conard, T. (author) / Meuris, M. (author) / Heyns, M. M. (author) / Dimoulas, A. (author) / Spiga, S. (author) / Fanciulli, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 256-260

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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