High Dose High Temperature Ion Implantation of Ge into 4H-SiC: Fid-Bau Portal

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Kups, T. / Weih, P. / Voelskow, M. / Skorupa, W. / Pezoldt, J.

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High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Kups, T. / Weih, P. / Voelskow, M. / Skorupa, W. / Pezoldt, J.

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Kups, T. / Weih, P. / Voelskow, M. / Skorupa, W. / Pezoldt, J.

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Document information

Title:

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Contributors:

Kups, T. (author) / Weih, P. (author) / Voelskow, M. (author) / Skorupa, W. (author) / Pezoldt, J. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 851-854

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Stoemenos, J. / Pecz, B. / Heera, V. | British Library Online Contents | 2000

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