A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices: Fid-Bau Portal

A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Krishnaswami, S. / Ryu, S. H. / Heath, B. / Agarwal, A. K. / Palmour, J. W. / Geil, B. R. / Lelis, A. J. / Scozzie, C. J.

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A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Krishnaswami, S. / Ryu, S. H. / Heath, B. / Agarwal, A. K. / Palmour, J. W. / Geil, B. R. / Lelis, A. J. / Scozzie, C. J.

A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Krishnaswami, S. / Ryu, S. H. / Heath, B. / Agarwal, A. K. / Palmour, J. W. / Geil, B. R. / Lelis, A. J. / Scozzie, C. J.

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Title:

A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices

Contributors:

Krishnaswami, S. (author) / Ryu, S. H. (author) / Heath, B. (author) / Agarwal, A. K. (author) / Palmour, J. W. (author) / Geil, B. R. (author) / Lelis, A. J. (author) / Scozzie, C. J. (author) / Devaty, R. P. / Larkin, D. J.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1313-1316

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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