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High Temperature Reliability of the SiC-MOSFET with Copper Metallization
High Temperature Reliability of the SiC-MOSFET with Copper Metallization
High Temperature Reliability of the SiC-MOSFET with Copper Metallization
Okabe, H. (author) / Yoshida, M. (author) / Tominaga, T. (author) / Fujita, J. (author) / Endo, K. (author) / Yokoyama, Y. (author) / Nishikawa, K. (author) / Toyoda, Y. (author) / Yamakawa, S. (author) / Okumura, H.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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