Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property: Fid-Bau Portal

Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property

Song, H. K. / Moon, J. H. / Yim, J. H. / Kim, H. J.

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Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property

Song, H. K. / Moon, J. H. / Yim, J. H. / Kim, H. J.

Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property

Song, H. K. / Moon, J. H. / Yim, J. H. / Kim, H. J.

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Check availability in my library

Order at Subito €

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Document information

Title:

Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property

Contributors:

Song, H. K. (author) / Moon, J. H. (author) / Yim, J. H. (author) / Kim, H. J. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 215-218

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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