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Ta2Si short time thermal oxidized layers in N2O and O2 to form high-k gate dielectric on SiC
Ta2Si short time thermal oxidized layers in N2O and O2 to form high-k gate dielectric on SiC
Ta2Si short time thermal oxidized layers in N2O and O2 to form high-k gate dielectric on SiC
Perez-Tomas, A. (author) / Mestres, N. (author) / Godignon, P. (author) / Montserrat, J. (author) / Millan, J. (author)
APPLIED SURFACE SCIENCE ; 253 ; 1741-1744
2006-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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