4H-SiC MOSFETs Using Thermal Oxidized Ta~2Si Films as High-k Gate Dielectric: Fid-Bau Portal

4H-SiC MOSFETs Using Thermal Oxidized Ta~2Si Films as High-k Gate Dielectric

Perez-Tomas, A. / Godignon, P. / Mestres, N. / Montserrat, J. / Millan, J.

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4H-SiC MOSFETs Using Thermal Oxidized Ta~2Si Films as High-k Gate Dielectric

Perez-Tomas, A. / Godignon, P. / Mestres, N. / Montserrat, J. / Millan, J.

4H-SiC MOSFETs Using Thermal Oxidized Ta~2Si Films as High-k Gate Dielectric

Perez-Tomas, A. / Godignon, P. / Mestres, N. / Montserrat, J. / Millan, J.

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Title:

4H-SiC MOSFETs Using Thermal Oxidized Ta~2Si Films as High-k Gate Dielectric

Contributors:

Perez-Tomas, A. (author) / Godignon, P. (author) / Mestres, N. (author) / Montserrat, J. (author) / Millan, J. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 713-716

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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