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Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescence
Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescence
Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescence
Sumitomo, T. (author) / Kita, H. (author) / Matsumoto, S. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 794-797
2006-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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