A platform for research: civil engineering, architecture and urbanism
Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films
Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films
Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films
Christensen, J. S. (author) / Kuznetsov, A. Y. (author) / Gunnaes, A. E. (author) / Svensson, B. G. (author) / Radamson, H. H. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 650-654
2006-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Boron diffusion in strained and strain-relaxed SiGe
British Library Online Contents | 2005
|British Library Online Contents | 2006
|Wafer bonding involving strain-relaxed SiGe
British Library Online Contents | 2005
|British Library Online Contents | 2005
|Capture cross-section of threading dislocations in thin films
British Library Online Contents | 2012
|