Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing: Fid-Bau Portal

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Ma, Q. / Yang, D.-r. / Ma, X.-y. / Cui, C.

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Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Ma, Q. / Yang, D.-r. / Ma, X.-y. / Cui, C.

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Ma, Q. / Yang, D.-r. / Ma, X.-y. / Cui, C.

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Check availability in my library

Order at Subito €

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Document information

Title:

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Contributors:

Ma, Q. (author) / Yang, D.-r. (author) / Ma, X.-y. (author) / Cui, C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -HANGZHOU- ; 24 ; 691-693

Publication date:

2006-01-01

Size:

3 pages

ISSN:

1004-793X

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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