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Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing
Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing
Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing
Ma, Q. (author) / Yang, D.-r. (author) / Ma, X.-y. (author) / Cui, C. (author)
MATERIALS SCIENCE AND ENGINEERING -HANGZHOU- ; 24 ; 691-693
2006-01-01
3 pages
Article (Journal)
Unknown
DDC:
620.11
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