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The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
Nabatame, T. (author) / Segawa, K. (author) / Kadoshima, M. (author) / Takaba, H. (author) / Iwamoto, K. (author) / Kimura, S. (author) / Nunoshige, Y. (author) / Satake, H. (author) / Ohishi, T. (author) / Toriumi, A. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 975-979
2006-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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