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    Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

    New search for: Lee, H.
    New search for: Lee, D. H.
    New search for: Kanashima, T.
    New search for: Okuyama, M.

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    Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

    New search for: Lee, H.
    New search for: Lee, D. H.
    New search for: Kanashima, T.
    New search for: Okuyama, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

    New search for: Lee, H.
    New search for: Lee, D. H.
    New search for: Kanashima, T.
    New search for: Okuyama, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

    Contributors:

    Lee, H. (author) / Lee, D. H. (author) / Kanashima, T. (author) / Okuyama, M. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 6932-6936

    Publication date:

    2008-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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