Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack: Fid-Bau Portal

Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack

Lee, Y. / Park, K. / Im, K. T. / Lee, J. Y. / Im, S. / Lee, J. H. / Yi, Y. / Lim, S.

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Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack

Lee, Y. / Park, K. / Im, K. T. / Lee, J. Y. / Im, S. / Lee, J. H. / Yi, Y. / Lim, S.

Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack

Lee, Y. / Park, K. / Im, K. T. / Lee, J. Y. / Im, S. / Lee, J. H. / Yi, Y. / Lim, S.

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Document information

Title:

Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack

Contributors:

Lee, Y. (author) / Park, K. (author) / Im, K. T. (author) / Lee, J. Y. (author) / Im, S. (author) / Lee, J. H. (author) / Yi, Y. (author) / Lim, S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 7179-7182

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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