The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films: Fid-Bau Portal

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Gao, L. G. / Yin, K. B. / Chen, L. / Guo, H. X. / Xia, Y. D. / Yin, J. / Liu, Z. G.

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The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Gao, L. G. / Yin, K. B. / Chen, L. / Guo, H. X. / Xia, Y. D. / Yin, J. / Liu, Z. G.

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Gao, L. G. / Yin, K. B. / Chen, L. / Guo, H. X. / Xia, Y. D. / Yin, J. / Liu, Z. G.

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Document information

Title:

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Contributors:

Gao, L. G. (author) / Yin, K. B. (author) / Chen, L. (author) / Guo, H. X. (author) / Xia, Y. D. (author) / Yin, J. (author) / Liu, Z. G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 256 ; 90-95

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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