Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors: Fid-Bau Portal

Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

Chiou, Y.-K. / Chang, C.-H. / Wu, T.-B.

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Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

Chiou, Y.-K. / Chang, C.-H. / Wu, T.-B.

Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

Chiou, Y.-K. / Chang, C.-H. / Wu, T.-B.

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Check availability in my library

Order at Subito €

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Document information

Title:

Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

Contributors:

Chiou, Y.-K. (author) / Chang, C.-H. (author) / Wu, T.-B. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 22 ; 1899-1906

Publication date:

2007-01-01

Size:

8 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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