A platform for research: civil engineering, architecture and urbanism
IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor
IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor
IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor
Hirose, F. (author) / Kinoshita, Y. (author) / Kanomata, K. (author) / Momiyama, K. (author) / Kubota, S. (author) / Hirahara, K. (author) / Kimura, Y. (author) / Niwano, M. (author)
APPLIED SURFACE SCIENCE ; 258 ; 7726-7731
2012-01-01
6 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2007
|British Library Online Contents | 2010
|British Library Online Contents | 2016
|Hafnium silicon oxide films prepared by atomic layer deposition
British Library Online Contents | 2004
|Silicon surface passivation using thin HfO2 films by atomic layer deposition
British Library Online Contents | 2015
|