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Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors
Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors
Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors
Chiou, Y.-K. (Autor:in) / Chang, C.-H. (Autor:in) / Wu, T.-B. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 22 ; 1899-1906
01.01.2007
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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