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Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD
Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD
Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD
Navamathavan, R. (author) / Kim, S. H. (author) / Jang, Y. J. (author) / Jung, A. S. (author) / Choi, C. K. (author)
APPLIED SURFACE SCIENCE ; 253 ; 8788-8793
2007-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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