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    Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

    New search for: Navamathavan, R.
    New search for: Kim, S. H.
    New search for: Jang, Y. J.
    New search for: Jung, A. S.
    New search for: Choi, C. K.

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    Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

    New search for: Navamathavan, R.
    New search for: Kim, S. H.
    New search for: Jang, Y. J.
    New search for: Jung, A. S.
    New search for: Choi, C. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

    New search for: Navamathavan, R.
    New search for: Kim, S. H.
    New search for: Jang, Y. J.
    New search for: Jung, A. S.
    New search for: Choi, C. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Influence of thermal treatment of low dielectric constant SiOC(H) films using MTES/O2 deposited by PECVD

    Contributors:

    Navamathavan, R. (author) / Kim, S. H. (author) / Jang, Y. J. (author) / Jung, A. S. (author) / Choi, C. K. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 253 ; 8788-8793

    Publication date:

    2007-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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