Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive: Fid-Bau Portal

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Lin, H. D. / Melnychuk, G. / Wyatt, J. L. / Koshka, Y.

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Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Lin, H. D. / Melnychuk, G. / Wyatt, J. L. / Koshka, Y.

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Lin, H. D. / Melnychuk, G. / Wyatt, J. L. / Koshka, Y.

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Check availability in my library

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Title:

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Contributors:

Lin, H. D. (author) / Melnychuk, G. (author) / Wyatt, J. L. (author) / Koshka, Y. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 133-136

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Soueidan, M. / Ferro, G. / Nsouli, B. et al. | British Library Online Contents | 2007

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Doping and interface of homoepitaxial diamond for electronic applications

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