Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation: Fid-Bau Portal

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

Hoshino, N. / Tajima, M. / Hayashi, T. / Nishiguchi, T. / Kinoshita, H. / Shiomi, H.

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Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

Hoshino, N. / Tajima, M. / Hayashi, T. / Nishiguchi, T. / Kinoshita, H. / Shiomi, H.

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

Hoshino, N. / Tajima, M. / Hayashi, T. / Nishiguchi, T. / Kinoshita, H. / Shiomi, H.

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Titel:

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

Beteiligte:

Hoshino, N. (Autor:in) / Tajima, M. (Autor:in) / Hayashi, T. (Autor:in) / Nishiguchi, T. (Autor:in) / Kinoshita, H. (Autor:in) / Shiomi, H. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I.

Erschienen in:

Silicon Carbide and Related Materials 2006 ; 275-278

MATERIALS SCIENCE FORUM ; 556/557

Erscheinungsdatum:

01.01.2007

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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Sueoka, K. / Akatsuka, M. / Nishihara, K. et al. | British Library Online Contents | 1995

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