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Investigation of Drain Current Saturation in 4H-SiC MOSFETs
Investigation of Drain Current Saturation in 4H-SiC MOSFETs
Investigation of Drain Current Saturation in 4H-SiC MOSFETs
Pennington, G. (author) / Potbhare, S. (author) / Goldsman, N. (author) / Habersat, D. (author) / Lelis, A. (author) / McGarrity, J. M. (author) / Ashman, C. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K.
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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