A platform for research: civil engineering, architecture and urbanism
Fabrication of pn-Junction Diode for N^+ Implanted 4H-SiC(0001) Annealed by EBAS
Fabrication of pn-Junction Diode for N^+ Implanted 4H-SiC(0001) Annealed by EBAS
Fabrication of pn-Junction Diode for N^+ Implanted 4H-SiC(0001) Annealed by EBAS
Egami, A. (author) / Shibagaki, M. (author) / Kumagai, A. (author) / Numajiri, K. (author) / Miyagawa, S. (author) / Kudo, T. (author) / Uchiumi, S. (author) / Satoh, M. (author) / Wright, N. / Johnson, C. M.
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
EBAS - Ein neues Bremskonzept der DB AG
IuD Bahn | 1998
|British Library Online Contents | 2005
|Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
British Library Online Contents | 2004
|Highly-Doped Implanted pn Junction for SiC Zener Diodes Fabrication
British Library Online Contents | 2002
|British Library Online Contents | 2006
|