Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing: Fid-Bau Portal

Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Shibagaki, M. / Satoh, M. / Kurematsu, Y. / Numajiri, K. / Watanabe, F. / Haga, S. / Miura, K. / Suzuki, T. / Miyagawa, S.

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Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Shibagaki, M. / Satoh, M. / Kurematsu, Y. / Numajiri, K. / Watanabe, F. / Haga, S. / Miura, K. / Suzuki, T. / Miyagawa, S.

Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Shibagaki, M. / Satoh, M. / Kurematsu, Y. / Numajiri, K. / Watanabe, F. / Haga, S. / Miura, K. / Suzuki, T. / Miyagawa, S.

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Title:

Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Contributors:

Shibagaki, M. (author) / Satoh, M. (author) / Kurematsu, Y. (author) / Numajiri, K. (author) / Watanabe, F. (author) / Haga, S. (author) / Miura, K. (author) / Suzuki, T. (author) / Miyagawa, S. (author) / Devaty, R. P.

Published in:

Silicon Carbide and Related Materials - 2005 ; 807-810

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Shibagaki, M. / Kurematsu, Y. / Watanabe, F. et al. | British Library Online Contents | 2005

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