OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes: Fid-Bau Portal

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Raynaud, C. / Loup, D. / Godignon, P. / Rodriguez, R. P. / Tournier, D. / Planson, D.

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OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Raynaud, C. / Loup, D. / Godignon, P. / Rodriguez, R. P. / Tournier, D. / Planson, D.

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Raynaud, C. / Loup, D. / Godignon, P. / Rodriguez, R. P. / Tournier, D. / Planson, D.

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Check availability in my library

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Title:

OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Contributors:

Raynaud, C. (author) / Loup, D. (author) / Godignon, P. (author) / Rodriguez, R. P. (author) / Tournier, D. (author) / Planson, D. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I.

Published in:

Silicon Carbide and Related Materials 2006 ; 1007-1010

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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