A platform for research: civil engineering, architecture and urbanism
Formation and Characterization of 3C-SIC by Carbon-Ion Implantation into Silicon with a MEVVA Ion Source
Formation and Characterization of 3C-SIC by Carbon-Ion Implantation into Silicon with a MEVVA Ion Source
Formation and Characterization of 3C-SIC by Carbon-Ion Implantation into Silicon with a MEVVA Ion Source
Wan, Y.Z. (author) / Xiong, G.Y. (author) / Song, F. (author) / Luo, H.L. (author) / Huang, Y. (author) / He, F. (author) / Guo, L.B. (author) / Wang, Y.L. (author)
SURFACE REVIEW AND LETTERS ; 14 ; 1103-1106
2007-01-01
4 pages
Article (Journal)
English
DDC:
530.417
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2007
|British Library Conference Proceedings | 1998
|British Library Online Contents | 2006
|High-Quality Semiconductor Carbon-Doped beta-FeSi~2 Film Synthesized by MEVVA Ion Implantation
British Library Online Contents | 2005
|Tribological properties changes of H13 steel induced by MEVVA Ta ion implantation
British Library Online Contents | 2004
|