Nitric acid oxidation method to form SiO2/3C-SiC structure at 120degreeC: Fid-Bau Portal

Nitric acid oxidation method to form SiO2/3C-SiC structure at 120degreeC

Im, S. S. / Terakawa, S. / Iwasa, H. / Kobayashi, H.

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Nitric acid oxidation method to form SiO2/3C-SiC structure at 120degreeC

Im, S. S. / Terakawa, S. / Iwasa, H. / Kobayashi, H.

Nitric acid oxidation method to form SiO2/3C-SiC structure at 120degreeC

Im, S. S. / Terakawa, S. / Iwasa, H. / Kobayashi, H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Nitric acid oxidation method to form SiO2/3C-SiC structure at 120degreeC

Contributors:

Im, S. S. (author) / Terakawa, S. (author) / Iwasa, H. (author) / Kobayashi, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 3667-3671

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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