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Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

Cheng, X. / Song, Z. / Jiang, J. / Yu, Y. / Yang, W. / Shen, D.

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Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

Cheng, X. / Song, Z. / Jiang, J. / Yu, Y. / Yang, W. / Shen, D.

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

Cheng, X. / Song, Z. / Jiang, J. / Yu, Y. / Yang, W. / Shen, D.

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Order at Subito €

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Document information

Title:

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

Contributors:

Cheng, X. (author) / Song, Z. (author) / Jiang, J. (author) / Yu, Y. (author) / Yang, W. (author) / Shen, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 8073-8076

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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