HfO2/GeOxNy/Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment: Fid-Bau Portal

HfO2/GeOxNy/Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment

Cao, Y. Q. / Chen, J. / Liu, X. J. / Li, X. / Cao, Z. Y. / Ma, Y. J. / Wu, D. / Li, A. D.

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HfO2/GeOxNy/Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment

Cao, Y. Q. / Chen, J. / Liu, X. J. / Li, X. / Cao, Z. Y. / Ma, Y. J. / Wu, D. / Li, A. D.

HfO2/GeOxNy/Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment

Cao, Y. Q. / Chen, J. / Liu, X. J. / Li, X. / Cao, Z. Y. / Ma, Y. J. / Wu, D. / Li, A. D.

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Document information

Title:

HfO2/GeOxNy/Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment

Contributors:

Cao, Y. Q. (author) / Chen, J. (author) / Liu, X. J. (author) / Li, X. (author) / Cao, Z. Y. (author) / Ma, Y. J. (author) / Wu, D. (author) / Li, A. D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 325 ; 13-19

Publication date:

2015-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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