Thermal evolution of defects produced by implantation of H, D and He in Silicon: Fid-Bau Portal

Thermal evolution of defects produced by implantation of H, D and He in Silicon

Simpson, P. J. / Knights, A. P. / Chicoine, M. / Dudeck, K. / Moutanabbir, O. / Ruffell, S. / Schiettekatte, F. / Terreault, B.

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Thermal evolution of defects produced by implantation of H, D and He in Silicon

Simpson, P. J. / Knights, A. P. / Chicoine, M. / Dudeck, K. / Moutanabbir, O. / Ruffell, S. / Schiettekatte, F. / Terreault, B.

Thermal evolution of defects produced by implantation of H, D and He in Silicon

Simpson, P. J. / Knights, A. P. / Chicoine, M. / Dudeck, K. / Moutanabbir, O. / Ruffell, S. / Schiettekatte, F. / Terreault, B.

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Title:

Thermal evolution of defects produced by implantation of H, D and He in Silicon

Contributors:

Simpson, P. J. (author) / Knights, A. P. (author) / Chicoine, M. (author) / Dudeck, K. (author) / Moutanabbir, O. (author) / Ruffell, S. (author) / Schiettekatte, F. (author) / Terreault, B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 63-67

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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