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Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe
Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe
Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe
Flachowsky, S. (author) / Wei, A. (author) / Herrmann, T. (author) / Illgen, R. (author) / Horstmann, M. (author) / Richter, R. (author) / Salz, H. (author) / Klix, W. (author) / Stenzel, R. (author)
2008-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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