60nm gate-length Si/SiGe HEMT: Fid-Bau Portal

60nm gate-length Si/SiGe HEMT

Kasamatsu, A. / Kasai, K. / Hikosaka, K. / Matsui, T. / Mimura, T.

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60nm gate-length Si/SiGe HEMT

Kasamatsu, A. / Kasai, K. / Hikosaka, K. / Matsui, T. / Mimura, T.

60nm gate-length Si/SiGe HEMT

Kasamatsu, A. / Kasai, K. / Hikosaka, K. / Matsui, T. / Mimura, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

60nm gate-length Si/SiGe HEMT

Contributors:

Kasamatsu, A. (author) / Kasai, K. (author) / Hikosaka, K. (author) / Matsui, T. (author) / Mimura, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 382-385

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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