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Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements

Severac, F. / Cristiano, F. / Bedel-Pereira, E. / Lerch, W. / Paul, S. / Kheyrandish, H.

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Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements

Severac, F. / Cristiano, F. / Bedel-Pereira, E. / Lerch, W. / Paul, S. / Kheyrandish, H.

Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements

Severac, F. / Cristiano, F. / Bedel-Pereira, E. / Lerch, W. / Paul, S. / Kheyrandish, H.

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Title:

Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements

Contributors:

Severac, F. (author) / Cristiano, F. (author) / Bedel-Pereira, E. (author) / Lerch, W. (author) / Paul, S. (author) / Kheyrandish, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 225-228

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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