Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process

Paul, D. J. / Temple, M. / Olsen, S. H. et al. | British Library Online Contents | 2005

Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation

Breeden, Michael / Wolf, Steven / Ueda, Scott et al. | British Library Online Contents | 2019

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Shi, G. X. / Xu, B. / Jin, P. et al. | British Library Online Contents | 2005

Quantitative study of isoelectronic copper pairs by photoluminescence and deep level transient spectroscopy

Erzgraeber, H. B. / Schmalz, K. | British Library Online Contents | 1995

Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer

Cheng, S. L. / Zhan, C. Y. / Lee, S. W. et al. | British Library Online Contents | 2011