The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy

Tao, Z. / Zhan, N. / Yang, H. et al. | British Library Online Contents | 2009

Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

Wolf, Steven / Edmonds, Mary / Sardashti, Kasra et al. | British Library Online Contents | 2018

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC

Nohira, H. / Kuroiwa, T. / Nakamura, M. et al. | British Library Online Contents | 2004

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process

Paul, D. J. / Temple, M. / Olsen, S. H. et al. | British Library Online Contents | 2005

Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)Si0.7Ge0.3 by nanosphere lithography with a thin interposing Si layer

Cheng, S. L. / Zhan, C. Y. / Lee, S. W. et al. | British Library Online Contents | 2011