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Strain relaxation in SiGe layer during wet oxidation process

Zhang, Y. / Cai, K. / Li, C. / Chen, S. / Lai, H. / Kang, J.

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Strain relaxation in SiGe layer during wet oxidation process

Zhang, Y. / Cai, K. / Li, C. / Chen, S. / Lai, H. / Kang, J.

Strain relaxation in SiGe layer during wet oxidation process

Zhang, Y. / Cai, K. / Li, C. / Chen, S. / Lai, H. / Kang, J.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Strain relaxation in SiGe layer during wet oxidation process

Contributors:

Zhang, Y. (author) / Cai, K. (author) / Li, C. (author) / Chen, S. (author) / Lai, H. (author) / Kang, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 3701-3705

Publication date:

2009-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Strain relaxation through islands formation in epitaxial SiGe thin films

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Rosenblad, C. / Stangl, J. / Muller, E. et al. | British Library Online Contents | 2000