Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face: Fid-Bau Portal

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Harada, S. / Kato, M. / Yatsuo, T. / Fukuda, K. / Arai, K.

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Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Harada, S. / Kato, M. / Yatsuo, T. / Fukuda, K. / Arai, K.

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Harada, S. / Kato, M. / Yatsuo, T. / Fukuda, K. / Arai, K.

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Check availability in my library

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Document information

Title:

Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face

Contributors:

Harada, S. (author) / Kato, M. (author) / Yatsuo, T. (author) / Fukuda, K. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 675-678

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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