Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation Annealing: Fid-Bau Portal

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J. / Fukuda, K. / Kojima, K. / Harada, S. / Kosugi, R. / Suzuki, S. / Suzuki, T. / Arai, K.

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Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J. / Fukuda, K. / Kojima, K. / Harada, S. / Kosugi, R. / Suzuki, S. / Suzuki, T. / Arai, K.

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J. / Fukuda, K. / Kojima, K. / Harada, S. / Kosugi, R. / Suzuki, S. / Suzuki, T. / Arai, K.

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Title:

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation Annealing

Contributors:

Senzaki, J. (author) / Fukuda, K. (author) / Kojima, K. (author) / Harada, S. (author) / Kosugi, R. (author) / Suzuki, S. (author) / Suzuki, T. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1061-1064

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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