High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing: Fid-Bau Portal

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Endo, T. / Okuno, E. / Sakakibara, T. / Onda, S.

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High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Endo, T. / Okuno, E. / Sakakibara, T. / Onda, S.

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Endo, T. / Okuno, E. / Sakakibara, T. / Onda, S.

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Check availability in my library

Order at Subito €

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Document information

Title:

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Contributors:

Endo, T. (author) / Okuno, E. (author) / Sakakibara, T. (author) / Onda, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 691-694

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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