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Effect of Post-Oxidation Annealing in Wet O~2 and N~2O Ambient on Thermally Grown SiO~2/4H-SiC Interface for p-Channel MOS Devices
Effect of Post-Oxidation Annealing in Wet O~2 and N~2O Ambient on Thermally Grown SiO~2/4H-SiC Interface for p-Channel MOS Devices
Effect of Post-Oxidation Annealing in Wet O~2 and N~2O Ambient on Thermally Grown SiO~2/4H-SiC Interface for p-Channel MOS Devices
Katakami, S. (author) / Arai, M. (author) / Takenaka, K. (author) / Yonezawa, Y. (author) / Ishimori, H. (author) / Okamoto, M. (author) / Kojima, K. (author) / Fukuda, K. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 709-712
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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