Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD: Fid-Bau Portal

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Leone, S. / Pedersen, H. / Henry, A. / Kordina, O. / Janzen, E.

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Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Leone, S. / Pedersen, H. / Henry, A. / Kordina, O. / Janzen, E.

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Leone, S. / Pedersen, H. / Henry, A. / Kordina, O. / Janzen, E.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Contributors:

Leone, S. (author) / Pedersen, H. (author) / Henry, A. (author) / Kordina, O. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 107-110

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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