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Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
Leone, S. (author) / Pedersen, H. (author) / Henry, A. (author) / Kordina, O. (author) / Janzen, E. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 107-110
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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