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Low Temperature Homoepitaxial Growth of 4H-SiC on 4^o Off-Axis Carbon-Face Substrate Using BTMSM Source
Low Temperature Homoepitaxial Growth of 4H-SiC on 4^o Off-Axis Carbon-Face Substrate Using BTMSM Source
Low Temperature Homoepitaxial Growth of 4H-SiC on 4^o Off-Axis Carbon-Face Substrate Using BTMSM Source
Lee, H.H. (author) / Seo, H.S. (author) / Lee, D.H. (author) / Kim, C.H. (author) / Kim, H.W. (author) / Kim, H.J. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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