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4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Kojima, K. / Ito, S. / Senzaki, J. / Okumura, H.

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4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Kojima, K. / Ito, S. / Senzaki, J. / Okumura, H.

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Kojima, K. / Ito, S. / Senzaki, J. / Okumura, H.

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Document information

Title:

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

Contributors:

Kojima, K. (author) / Ito, S. (author) / Senzaki, J. (author) / Okumura, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.

Published in:

Silicon Carbide and Related Materials 2009 ; 99-102

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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