A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
Kallinger, B. (author) / Thomas, B. (author) / Friedrich, J. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 143-146
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
| British Library Online Contents | 2006
Growth of delta-Doped SiC Epitaxial Layers
| British Library Online Contents | 2001