Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

Das, H. / Melnychuk, G. / Koshka, Y. | British Library Online Contents | 2009

Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

Krishnan, B. / Das, H. / Lin, H. D. et al. | British Library Online Contents | 2007

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

Krishnan, B. / Merrett, N. / Melnychuk, G. et al. | British Library Online Contents | 2010

Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Kotamraju, S.P. / Krishnan, B. / Melnychuk, G. et al. | British Library Online Contents | 2010

Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

Hallstedt, J. / Suvar, E. / Menon, C. et al. | British Library Online Contents | 2004