A platform for research: civil engineering, architecture and urbanism
Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
Zippelius, B. (author) / Krieger, M. (author) / Weber, H.B. (author) / Pensl, G. (author) / Kallinger, B. (author) / Friedrich, J. (author) / Thomas, B. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 393-396
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Distinguishing and identifying point and extended defects in DLTS measurements
British Library Online Contents | 2005
|Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
British Library Online Contents | 2014
|Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
British Library Online Contents | 2005
|Growth and Properties of SiC On-Axis Homoepitaxial Layers
British Library Online Contents | 2010
|DLTS analysis of nickel-hydrogen complex defects in silicon
British Library Online Contents | 1999
|