Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition: Fid-Bau Portal

Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition

Cammilleri, V.D. / Yam, V. / Fossard, F. / Renard, C. / Bouchier, D. / Zheng, Y. / Fazzini, P.F. / Houdellier, F. / Hytch, M.

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Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition

Cammilleri, V.D. / Yam, V. / Fossard, F. / Renard, C. / Bouchier, D. / Zheng, Y. / Fazzini, P.F. / Houdellier, F. / Hytch, M.

Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition

Cammilleri, V.D. / Yam, V. / Fossard, F. / Renard, C. / Bouchier, D. / Zheng, Y. / Fazzini, P.F. / Houdellier, F. / Hytch, M.

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Title:

Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition

Contributors:

Cammilleri, V.D. (author) / Yam, V. (author) / Fossard, F. (author) / Renard, C. (author) / Bouchier, D. (author) / Zheng, Y. (author) / Fazzini, P.F. (author) / Houdellier, F. (author) / Hytch, M. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 214-216

Publication date:

2008-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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