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Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition
Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition
Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition
Sun, E. (author) / Su, F. H. (author) / Chen, C. H. (author) / Chen, M. J. (author)
APPLIED SURFACE SCIENCE ; 256 ; 5021-5024
2010-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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