Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers: Fid-Bau Portal

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Tsuchida, H. / Ito, M. / Kamata, I. / Nagano, M. / Miyazawa, T. / Hoshino, N.

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Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Tsuchida, H. / Ito, M. / Kamata, I. / Nagano, M. / Miyazawa, T. / Hoshino, N.

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Tsuchida, H. / Ito, M. / Kamata, I. / Nagano, M. / Miyazawa, T. / Hoshino, N.

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Document information

Title:

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Contributors:

Tsuchida, H. (author) / Ito, M. (author) / Kamata, I. (author) / Nagano, M. (author) / Miyazawa, T. (author) / Hoshino, N. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.

Published in:

Silicon Carbide and Related Materials 2009 ; 77-82

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Reshanov, S. A. / Klettke, O. / Pensl, G. et al. | British Library Online Contents | 2003